Light emitting device having multi-pattern structure and method of manufacturing same
AssigneesSamsung LED Co., Ltd., Seoul National University Industry Foundation
InventorsJeong-wook Lee, Jin-seo Im, Bok-ki Min, Kwang-hyeon Baik, Heon-su Jeon
Life of this patent
Estimating the term…
Abstract
A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.
Claims20
A semiconductor light emitting device having a multiple pattern structure, the semiconductor light emitting device comprising:
- a substrate, and
- a semiconductor layer, an active layer and an electrode layer formed on the substrate,
- the multiple pattern structure comprising:
- a first pattern defining a first corrugated structure on a surface of the substrate;
- and
- a second pattern defining a second corrugated nano pattern structure on the first corrugated structure of the first pattern, a part of the second pattern contacting the semiconductor layer;
- and
- an optically transmitting material formed in a groove of the second corrugated nano pattern structure of the second pattern, and having a different level of refractivity than that of the substrate and the semiconductor layer.
A semiconductor light emitting device having a multiple pattern structure, the semiconductor light emitting device comprising:
- a substrate;
- and
- a semiconductor layer, an active layer, and an electrode layer formed on the substrate,
- the multiple pattern structure comprising:
- a first pattern defining a first corrugated structure on a surface of the substrate, a part of the first pattern contacting the semiconductor layer and
- a second pattern defining a second corrugated nano dot pattern structures formed of an optically transmitting material having a different level of refractivity than that of the substrate and the semiconductor layer, and formed on the first corrugated structure of the first pattern.
A method of forming a semiconductor light emitting device having a multiple pattern structure, the method comprising:
- forming a first pattern defining a first corrugated structure on a surface of a substrate;
- and
- forming a second pattern defining a second corrugated nano structure on the first corrugated structure of the first pattern;
- forming an optically transmitting material in a groove of the second corrugated nano pattern structure of the second pattern, to expose a part of the second pattern;
- forming a semiconductor layer on the first and second patterns, wherein the semiconductor layer is formed to contact the second pattern,
- wherein the optical transmitting material has a different level of refractivity than that of the substrate and the semiconductor layer.
Dependencies are inferred from the claim text.