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US 8,013,353 B2Granted
Light-emitting element
AssigneeLG Innotek Co., Ltd.
InventorHyung Jo Park
Life of this patent
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Abstract
Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a second electrode layer, a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on the second electrode layer, a reflective member spaced apart from the light emitting semiconductor layer on the second electrode layer, and a first electrode layer on the first conductive semiconductor layer.
Claims5
A light emitting device comprising:
- a second electrode layer;
- a stacked structure comprising a second conductive type semiconductor layer on the second electrode layer, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer;
- a first electrode layer on the first conductive type semiconductor layer;
- a reflective member spaced from a side surface of the stacked structure;
- and
- an ohmic contact layer disposed between the second electrode layer and the second conductive type semiconductor layer.
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A method of fabricating a light emitting device, the method comprising:
- forming an un-doped GaN layer, a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on a substrate;
- forming a second electrode layer on the second conductive type semiconductor layer;
- removing the substrate and the un-doped GaN layer;
- forming a mask on the first conductive type semiconductor layer and etching therethrough such that forming a stacked structure for emitting light and a reflective member spaced from the stacked structure;
- and
- forming a first electrode layer on the first conductive type semiconductor layer.
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Dependencies are inferred from the claim text.