Method of manufacturing semiconductor device and semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsYasuto Miyake, Ryoji Hiroyama, Masayuki Hata
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.
Claims10
A semiconductor device comprising:
- a substrate including an upper surface, a lower surface and a dislocation concentrated region obliquely extending with respect to said upper surface and arranged so as to part a first side closer to said upper surface and a second side closer to said lower surface;
- a semiconductor device layer formed on said upper surface;
- and
- an electrode formed on said lower surface, wherein said semiconductor device layer includes a waveguide,
- a region of said substrate under said waveguide exists within only either said first side or said second side,
- a cavity facet of said waveguide is formed parallel to a (0001) plane, and
- said upper surface is substantially equal to a nonpolar plane.
A semiconductor device comprising:
- a substrate including an upper surface, a lower surface and a dislocation concentrated region obliquely extending with respect to said upper surface and arranged so as to part a first side closer to said upper surface and a second side closer to said lower surface;
- a semiconductor device layer formed on said upper surface;
- and
- an electrode formed on said lower surface, wherein said semiconductor device layer includes a waveguide,
- a region of said substrate under said waveguide exists within only either said first side or said second side,
- a cavity facet of said waveguide is formed parallel to a (0001) plane, and said dislocation concentrated region is formed parallel to a (11-20) plane.
A semiconductor device comprising:
- a substrate including an upper surface, a lower surface and a dislocation concentrated region obliquely extending with respect to said upper surface and arranged so as to part a first side closer to said upper surface and a second side closer to said lower surface;
- a semiconductor device layer formed on said upper surface;
- and
- an electrode formed on said lower surface, wherein said semiconductor device layer includes a waveguide,
- a region of said substrate under said waveguide exists within only either said first side or said second side, and
- a cavity facet of said waveguide is formed parallel to a (0001) plane, the semiconductor device further comprising a ridge formed on said upper surface, wherein
- said waveguide is formed on a lower domain of said ridge.
Dependencies are inferred from the claim text.