Semiconductor device with semiconductor body and method for the production of a semiconductor device
AssigneeInfineon Technologies AG
InventorGerhard Schmidt
Life of this patent
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Abstract
A semiconductor device includes a semiconductor body with a front-sided surface. An active cell region with a semiconductor device structure and an edge region surrounding the active cell region are arranged in the semiconductor body. The front-sided surface of the semiconductor body includes a passivation layer over the edge region and over the active cell region. The passivation layer includes a semiconducting insulation layer of a semiconducting material, the bandgap of which is greater than the bandgap of the material of the semiconductor body.
Claims18
A semiconductor device with a semiconductor body, comprising:
- a front-sided surface;
- an active cell region including a semiconductor device structure;
- and
- an edge region surrounding the active cell region;
- wherein a layer on the front-sided surface includes a passivation layer over the edge region and over the active cell region, the passivation layer including a semiconducting insulation layer of a semiconducting material, a bandgap of the semiconducting insulation layer being greater than a bandgap of the material of the semiconductor body,
- wherein a conducting layer is arranged at least partially on the semiconducting insulation layer,
- wherein a further layer is arranged at least partially between the semiconducting insulation layer and the conducting layer,
- wherein the further layer includes a silicate glass, selected from the group of boron phosphorous silicate glasses, boron silicate glasses and of the undoped silicate glasses, and
- wherein the semiconducting material of the semiconducting insulation layer includes silicon-doped amorphous carbon.
A semiconductor device with a semiconductor body, comprising:
- a front-sided surface;
- an active cell region including a semiconductor device structure;
- and
- an edge region surrounding the active cell region;
- wherein a layer on the front-sided surface includes a passivation layer over the edge region and over the active cell region, the passivation layer including a semiconducting insulation layer of a semiconducting material, a bandgap of the semiconducting insulation layer being greater than a bandgap of the material of the semiconductor body,
- wherein at least one trench gate electrode is arranged in the active cell region.
A semiconductor device with a semiconductor body, comprising:
- a front-sided surface;
- an active cell region including a semiconductor device structure;
- and
- an edge region surrounding the active cell region;
- wherein a layer on the front-sided surface includes a passivation layer over the edge region and over the active cell region, the passivation layer including a semiconducting insulation layer of a semiconducting material, a bandgap of the semiconducting insulation layer being greater than a bandgap of the material of the semiconductor body,
- wherein the semiconductor device structure includes at least one IGBT.
A semiconductor device with a semiconductor body, comprising:
- a front-sided surface;
- an active cell region including a semiconductor device structure;
- and
- an edge region surrounding the active cell region;
- wherein a layer on the front-sided surface includes a passivation layer over the edge region and over the active cell region, the passivation layer including a semiconducting insulation layer of a semiconducting material, a bandgap of the semiconducting insulation layer being greater than a bandgap of the material of the semiconductor body,
- wherein a conducting layer is arranged at least partially on the semiconducting insulation layer,
- wherein a further layer is arranged at least partially between the semiconducting insulation layer and the conducting layer,
- wherein the further layer includes a silicate glass, selected from the group of boron phosphorous silicate glasses, boron silicate glasses and of the undoped silicate glasses, and
- wherein the further layer directly contacts the semiconducting insulation layer and the conducting layer.
Dependencies are inferred from the claim text.