Thin film transistor, method of manufacturing the same, and electronic device using the same
AssigneePanasonic Corporation
InventorNaohide Wakita
Life of this patent
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Abstract
A thin film transistor according to the present invention includes: a semiconductor layer (5); a source electrode (3s) and a drain electrode (3d) that each are connected to the semiconductor layer (5); an insulating layer (6) that is formed adjacent to the semiconductor layer (5); and a gate electrode (7) that faces the semiconductor layer (5) across the insulating layer (6). The semiconductor layer (5) includes an aggregate of semiconductor fine particles composed of a complex oxide. The complex oxide contains zinc and at least one selected from a group consisting of indium, gallium and rhodium.
Claims13
A thin film transistor comprising:
- a semiconductor layer;
- a source electrode and a drain electrode that each are connected to the semiconductor layer;
- an insulating layer that is formed adjacent to the semiconductor layer;
- and a gate electrode that faces the semiconductor layer across the insulating layer,
- wherein the semiconductor layer includes an aggregate of semiconductor fine particles composed of a complex oxide, and
- the complex oxide contains zinc and at least one selected from a group consisting of indium, gallium, and rhodium.
A method of manufacturing a thin film transistor including a semiconductor layer, the method comprising the steps of:
- (i) forming a layer including an aggregate of semiconductor fine particles composed of a complex oxide by using a liquid that contains the semiconductor fine particles composed of the complex oxide;
- and
- (ii) forming the semiconductor layer by subjecting the layer including the aggregate of the semiconductor fine particles to a heat treatment at a temperature of 150° C. or higher,
- wherein the complex oxide contains zinc and at least one selected from a group consisting of indium, gallium, and rhodium.
Dependencies are inferred from the claim text.