Electronic device

An electronic device having a thin-film transistor, the thin-film transistor comprising:

• an insulating substrate;
• a source electrode, and a drain electrode, disposed over the top of the insulating substrate;
• a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively;
• a gate dielectric film formed over the top of at least the semiconductor layer;
• and
• a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer, wherein a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator;
• wherein the first and second bank insulators are formed to have a plurality of sidewall faces which have inverse taper shapes against the insulating substrate, and the semiconductor layer is formed such that respective sidewall faces thereof are butted against a sidewall face of the source electrode, and a sidewall face of the drain electrode, while overlying the source electrode, and the drain electrode.