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US 8,013,326 B2Granted
Organic thin film transistor substrate and method of manufacture
AssigneeSamsung Electronics Co., Ltd.
InventorsTae-Young Choi, Seong-Sik Shin, Bo-Sung Kim
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Abstract
An organic thin film transistor substrate includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode to have a source-connecting portion and a drain-seating groove, a source electrode formed in the source-connecting portion, a drain electrode formed in the drain-seating groove and an organic semiconductor layer contacting the gate insulation layer, the source electrode and the drain electrode.
Claims16
An organic thin film transistor substrate, comprising:
- a gate line formed on a substrate;
- a gate electrode connected to the gate line;
- a data line comprising a first data line and a second data line disconnected from each other, formed on the substrate, and insulated from the gate line;
- a gate insulation layer formed on the gate electrode, the gate line, and the data line, the gate insulation layer having a source-connecting portion and a drain-seating groove, which are recessed from a surface of the gate insulating layer, and having a third contact hole to expose a portion of the data line;
- a source electrode formed in the source-connecting portion;
- a drain electrode formed in the drain-seating groove;
- an organic semiconductor layer contacting the gate insulation layer, the source electrode and the drain electrode, and
- wherein the gate insulation layer has a bridge groove recessed from the surface of the gate insulation layer, and a data bridge electrode formed in the bridge groove to connect the first data line and the second data line.
5 more elements
A method of manufacturing an organic thin film transistor substrate, comprising:
- forming a gate line, a gate electrode, and a data line having a first data line and a second data line disconnected from each other on a substrate;
- forming a gate insulation layer on the gate electrode, the gate line, and the date line, the gate insulation layer having a source-connecting portion and a drain-seating groove, which are recessed from a surface of the gate insulating layer, and having a third contact hole to expose a portion of the data line;
- forming a source electrode in the source-connecting portion;
- forming a drain electrode in the drain-seating groove;
- forming an organic semiconductor layer to be connected to the source electrode and the drain electrode,
- forming a bridge groove recessed from the surface of the gate insulation layer;
- and
- forming a data bridge electrode in the bridge groove to connect the first data line and the second data line.
5 more elements
Dependencies are inferred from the claim text.