Nitride semiconductor and method for manufacturing thereof

A nitride semiconductor, comprising:

• a buffer layer formed on a substrate;
• an under layer formed on the buffer layer;
• an active layer formed on the under layer for emitting light;
• a P-type nitride layer comprising a group 4 element on the active layer,
• wherein the group 4 element is not substantially combined with hydrogen (H),
• wherein the group 4 element is an element selected from the group consisting of silicon (Si), carbon (C), and germanium (Ge), and
• wherein the group 4 element is at least partially doped at one or more nitrogen vacancies of the P-type nitride layer.

A nitride semiconductor, comprising:

• a conductive substrate;
• a N-type semiconductor layer on the conductive substrate;
• an active layer on the N type semiconductor layer;
• and
• a P-type semiconductor layer on the active layer,
• wherein the P-type semiconductor layer comprises at least one group 4 element,
• wherein the group 4 element is not substantially combined with hydrogen (H),
• wherein the group 4 element is an element selected from the group consisting of silicon (Si), carbon (C), and germanium (Ge), and
• wherein the group 4 element is at least partially doped at one or more nitrogen vacancies of the P-type semiconductor layer.