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US 8,013,320 B2Granted
Nitride semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorsHisayoshi Matsuo, Tatsuo Morita, Tetsuzo Ueda, Daisuke Ueda
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Abstract
A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.
Claims20
A nitride semiconductor device comprising:
- a semiconductor stacked structure, which is formed of a nitride semiconductor, having a first principal surface and a second principal surface opposed to the first principal surface, and which includes an active layer and a superlattice layer,
- wherein the first principal surface is formed with a plurality of first indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane,
- the active layer is formed along the {1-101} plane, and
- the superlattice layer is formed as a plurality of second indentations.
1 more element
Dependencies are inferred from the claim text.