Phase change random access memory for actively removing residual heat and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorDae Ho Rho
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Abstract
A phase change random access memory for actively removing residual heat and a method of manufacturing the same are presented. The phase change random access memory includes a semiconductor substrate, a phase change pattern, a heating electrode and a cooling electrode. The phase change pattern is on the semiconductor substrate. The heating electrode is electrically coupled to the phase change pattern for heating the phase change pattern. The cooling electrode is electrically coupled to the phase change pattern for removing residual heat from the phase change pattern.
Claims18
A phase change random access memory comprising:
- a semiconductor substrate;
- a phase change pattern on the semiconductor substrate;
- a heating electrode electrically coupled to the phase change pattern for actively heating the phase change pattern;
- and
- a cooling electrode electrically coupled to the phase change pattern for actively removing residual heat in the phase change pattern;
- wherein the heating electrode and the cooling electrode form in a planar surface and space apart form each other.
A phase change random access memory comprising:
- a semiconductor substrate;
- an interlayer dielectric layer formed on the semiconductor substrate;
- a heating electrode formed in the interlayer dielectric layer;
- a cooling electrode formed in the interlayer dielectric layer such that the cooling electrode is spaced away from the heating electrode at a predetermined distance;
- and
- a phase change pattern formed on the interlayer dielectric layer electrically coupled to the heating electrode and to the cooling electrode.
Dependencies are inferred from the claim text.