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US 8,013,306 B2Granted
Single crystal scintillator material and method for producing the same
AssigneeHitachi Metals, Ltd.
InventorsHiroyuki Okuda, Naoyuki Okamoto
Life of this patent
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Abstract
A single crystal scintillator material according to the present invention includes a single crystal portion that is represented by the compositional formula (CexLu1-x)BO3 in which the mole fraction x of Ce satisfies 0.0001≦x≦0.05.
Claims10
A single crystal scintillator material comprising a single crystal portion that is represented by the compositional formula (CexLu1-x)BO3 in which the mole fraction x of Ce satisfies 0.0001≦x≦0.05.
A method of making a single crystal scintillator material, the method comprising the steps of:
- mixing a Ce compound and a Lu compound in a solvent, which includes lead borate as main component, so that the concentration of the compounds becomes equal to or higher than the saturation concentration of the solvent and then heating the mixture to a temperature of 800° C. to 1,350° C., thereby dissolving the compounds;
- and
- growing and depositing a single crystal by cooling the compounds dissolved, the single crystal being represented by the compositional formula (CexLu1-x)BO3, in which the mole fraction x of Ce satisfies 0.0001≦x≦0.05.
Dependencies are inferred from the claim text.