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US 8,012,921 B2Granted
Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHong-Sick Park, Jong-Hyun Jeong, Suk-Il Yoon, Seong-Bae Kim, Wy-Yong Kim, Soon-Beom Huh, Byung-Uk Kim
Life of this patent
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Abstract
The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
Claims7
A photoresist stripper, comprising:
- about 5 wt % to about 20 wt % alcohol amine;
- about 40 wt % to about 70 wt % glycol ether;
- about 20 wt % to about 40 wt % N-methyl pyrrolidone;
- and
- about 0.2 wt % to about 6 wt % chelating agent, wherein the chelating agent is one of methyl gallate, hydroxyl ethyl piperazine (HEP), and a mixture thereof.
2 more elements
A photoresist stripper, comprising:
- about 5 wt % to about 20 wt % N-monoethanol amine;
- about 40 wt % to about 70 wt % butyl diglycol;
- about 20 wt % to about 40% N-methyl pyrrolidone;
- and
- about 0.2 wt % to about 6 wt % a chelating agent, wherein the chelating agent is one of methyl gallate, hydroxyl ethyl piperazine (HEP), and a mixture thereof.
2 more elements
A photoresist stripper, comprising:
- about 5 wt % to about 20 wt % N-monoethanol amine;
- about 40 wt % to about 70 wt % butyl diglycol;
- about 20 wt % to about 40 wt % N-methyl pyrrolidone;
- about 0.1 wt % to about 3 wt % methyl gallate;
- and
- about 0.1 wt % to about 3 wt % hydroxyl ethyl piperazine.
3 more elements
Dependencies are inferred from the claim text.