Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device for:

• placing in a processing chamber a substrate that has at least a silicon surface and an insulating film surface on a surface, and in which a natural oxide film or impurities is formed on the silicon surface and the insulating film surface;
• and
• forming a silicon single crystal film selectively only on the silicon surface by using a substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate, using a heating unit disclosed outside of the processing chamber,
• the manufacturing method comprising:
• a substrate loading step of loading the substrate into the processing chamber;
• a pre-processing step of supplying dichlorosilane gas and hydrogen gas into the processing chamber while maintaining a temperature of the substrate and an inside of the substrate processing chamber to a prescribed temperature of 800° C. or less, and removing the natural oxide film or the impurities formed on the silicon surface and the insulating film surface;
• a first epitaxial growing step of supplying the dichlorosilane gas of a prescribed gas flow rate between 1 sccm and 300 sccm and the hydrogen gas of a prescribed gas flow rate between 10 sccm and 50000 sccm to the processing chamber while maintaining the temperature of the substrate and the inside of the processing chamber to a prescribed temperature between 680° C. and 720° C., and forming a first silicon single crystal film selectively only on the silicon surface, after the pre-processing step;
• a second epitaxial growing step of supplying the dichlorosilane gas of a prescribed gas flow rate between 1 sccm and 300 sccm, the hydrogen gas of a prescribed gas flow rate between 10 sccm and 50000 sccm, and a second chlorine-based gas in addition to the dichlorosilane gas of a prescribed gas flow rate between 1 sccm and 300 sccm to the processing chamber while maintaining the temperature of the substrate and the inside of the processing chamber to a prescribed temperature between 720° C. and 800° C., and forming a second silicon single crystal film selectively on the first silicon single crystal film formed by the first epitaxial growing step, after the first epitaxial growing step;
• and
• a substrate unloading step of unloading the substrate to outside of the processing chamber.

A manufacturing method of a semiconductor device for:

• placing in a processing chamber a substrate that has at least a silicon surface and an insulating film surface on a surface, and in which a natural oxide film or impurities is formed on the silicon surface and the insulating film surface;
• and
• forming a silicon single crystal film selectively only on the silicon surface by using a substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate, using a heating unit disposed outside of the processing chamber,
• the manufacturing method comprising:
• a substrate loading step of loading the substrate into the processing chamber;
• a pre-processing step of supplying dichlorosilane gas and hydrogen gas into the processing chamber while maintaining a temperature of the substrate and an inside of the substrate processing chamber to a prescribed temperature of 800° C. or less, and removing the natural oxide film or the impurities formed on the silicon surface and the insulating film surface;
• a first epitaxial growing step of supplying the dichlorosilane gas and the hydrogen gas to the processing chamber, and forming a first silicon single crystal film selectively only on the silicon surface, after the pre-processing step;
• a second epitaxial growing step of supplying the dichlorosilane gas, a second chlorine-based gas in addition to the dichlorosilane gas and hydrogen gas to the processing chamber, and forming a second silicon single crystal film selectively on the first silicon single crystal film formed by the first epitaxial growing step;
• and
• a substrate unloading step of unloading the substrate to outside of the processing chamber
• wherein the second epitaxial growing step is performed while a temperature of the substrate and the inside of the substrate processing chamber is maintained to a temperature higher than the temperature of the substrate and the inside of the substrate processing chamber of the first epitaxial growing step.