Back to results
US 8,012,879 B2Granted
Etching method using an at least semi-solid media
AssigneeTexas Instruments Incorporated
InventorDarwin Rusli
Life of this patent
Estimating the term…
Abstract
An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.
Claims3
An etching method, comprising the steps of:
- retaining an etch reactant within an at least semi-solid media to form an etch reactant media, wherein the at least semi-solid media comprises a diced agar gel solution;
- applying the etch reactant media to a surface of a semiconductor wafer to remove at least a portion of a layer;
- and
- removing the etch reactant media.
1 more element
An etching method, comprising the steps of:
- retaining an etch reactant within an at least semi-solid media to form an etch reactant media, wherein the at least semi-solid media comprises a diced solid;
- applying the etch reactant media to a surface of a semiconductor wafer to remove at least a portion of a layer;
- and
- removing the etch reactant media.
1 more element
An etching method, comprising the steps of:
- retaining an etch reactant within an at least semi-solid media to form an etch reactant media, wherein the at least semi-solid media comprises poly propylene beads;
- applying the etch reactant media to a surface of a semiconductor wafer to remove at least a portion of a layer;
- and
- removing the etch reactant media.
1 more element
Dependencies are inferred from the claim text.