Method for providing temperature uniformity of rapid thermal annealing
AssigneeSuVolta, Inc.
InventorNicholas K. Eib
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Abstract
A method for annealing a semiconductor device having at least one polysilicon region formed on a substrate, comprises growing dielectric material on the substrate adjacent to the polysilicon region. The method continues by polishing a surface of the dielectric material and by depositing a layer of a semi-transparent material on both the surface of the dielectric material and the surface of the polysilicon region. The method concludes by annealing the semiconductor device.
Claims16
A method for annealing a semiconductor device having a polysilicon gate contact region formed on a substrate, a polysilicon source contact region formed on the substrate, and a polysilicon drain contact region formed on the substrate, the method comprising:
- forming dielectric material on the substrate in gaps between the polysilicon gate contact region, the polysilicon source contact region, and the polysilicon drain contact region;
- polishing the dielectric material;
- depositing a layer of semi-transparent material on the dielectric material, the polysilicon gate contact region, the polysilicon source contact region, and the polysilicon drain contact region;
- and
- annealing the semiconductor device.
Dependencies are inferred from the claim text.