Semiconductor device having EMI shielding and method therefor
OwnerHerbert delos Santos Naval, Noel A. Sur +1inventors
InventorsHerbert delos Santos Naval, Noel A. Sur, John A. Soriano
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a substrate having a plurality of metal layers. A die coupled to the substrate. A first wire fence structure is formed on the substrate. A second wire fence structure is formed on the substrate. A mold compound is used for encapsulating the die, a first surface of the substrate, the first wire fence structure, and the second wire fence structure, wherein a top portion of at least one of the first wire fence structure or the second wire fence structure is exposed. A conductive coating is applied to the mold compound and to the portion of the at least one of the first wire fence structure or the second wire fence structure is exposed.
Claims17
A method of manufacturing a semiconductor device comprising:
- providing a substrate having a plurality of metal layers;
- coupling a die to a first surface of the substrate;
- attaching a first wire fence structure and a second wire fence structure to the metal layers on the substrate, wherein the second wire fence structure forms a loop over the first wire fence structure and is in the same vertical plane as the first wire fence structure;
- applying a mold compound to encapsulate the die, a first surface of the substrate, the first wire fence structure, and the second wire fence structure, wherein a top portion of at least one of the first wire fence structure or the second wire fence structure is exposed;
- and
- applying a conductive coating to the mold compound and to the portion of the at least one of the first wire fence structure or the second wire fence structure exposed.
A semiconductor device comprising:
- a substrate having a plurality of metal layers;
- a die coupled to the substrate;
- a first wire fence structure formed on the substrate;
- a second wire fence structure formed on the substrate, wherein the second wire fence structure forms a loop over the first wire fence structure and is in the same vertical plane as the first wire fence structure;
- a mold compound encapsulating the die, a first surface of the substrate, the first wire fence structure, and the second wire fence structure, wherein a top portion of at least one of the first wire fence structure or the second wire fence structure is exposed;
- and
- a conductive coating applied to the mold compound and to the portion of the at least one of the first wire fence structure or the second wire fence structure is exposed.
A semiconductor device comprising:
- a substrate having a plurality of metal layers;
- a die coupled to the substrate;
- a first plurality of metal wires, wherein both ends of each metal wire of the first plurality of metal wires are coupled to at least one metal layer to form a loop of a first height;
- a second plurality of metal wires, wherein both ends of each metal wire of the second plurality of metal wires are coupled to at least one metal layer to form a loop of a second height, wherein at least one of the second plurality of wires forms a loop over at least one of the first plurality of metal wires and is in the same vertical plane as the at least one of the first plurality of metal wires;
- a mold compound encapsulating the die, a first surface of the substrate, the first plurality of metal wires, and the second plurality of metal wires, wherein a portion of the loop of at least one metal wire of at least one of the first plurality of metal wires or second plurality of metal wires is exposed;
- and
- a conductive coating applied to the mold compound and to the portion of the loop of the at least one metal wire exposed.
Dependencies are inferred from the claim text.