High temperature, stable SiC device interconnects and packages having low thermal resistance
AssigneeAstriphey Applications L.L.C.
InventorVivek Mehrotra
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Abstract
A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.
Claims30
A process comprising:
- providing a bonding material between an electronic device and a substrate, wherein the electronic device includes a first conductive material layer, and wherein the substrate includes a second conductive material layer and a third conductive material layer, and wherein the third conductive material layer is disposed over the second conductive material layer and comprises a different material than the bonding material;
- bringing the bonding material, the electronic device, and the substrate together;
- and
- heating the bonding material, the electronic device, and the substrate to form a conductive ternary or quaternary mixture from the bonding material and the first and second conductive material layers, the mixture having a higher melting point than at least one of the bonding material, the first conductive material layer, or the second conductive material layer.
A process comprising:
- providing a bonding material between a first conductive material formed on a first device and a second conductive material formed on a substrate;
- bringing the bonding material, the first conductive material, and the second conductive material together;
- and
- heating the bonding material, the first conductive material, and the second conductive material to form a conductive ternary or quaternary composition having a higher melting point than at least one of the first electrically conductive material, the second electrically conductive material, and the bonding material, wherein said heating includes heating the bonding material, the first conductive material, and the second conductive material to a temperature above the melting point of the conductive ternary or quaternary composition.
A process comprising:
- bringing a bonding material, a first conductive material disposed on a surface of an electronic device, and a second conductive material disposed on a surface of a substrate into contact;
- and
- heating the bonding material, the first conductive material, and the second conductive material to form a conductive ternary or quaternary composition having a higher melting point than at least one of the first electrically conductive material, the second electrically conductive material, and the bonding material, wherein the conductive ternary or quaternary composition has a higher electrical and thermal conductivity than the bonding material.
Dependencies are inferred from the claim text.