Controlled process and resulting device
AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Nathan W. Cheung
Life of this patent
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Abstract
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Claims21
A process for forming a material for a solar cell, said process comprising steps of:
- disposing a donor substrate on a metal workpiece utilizing an adhesive;
- introducing hydrogen particles through a surface of the donor substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth;
- providing a thermal sink configured to lower a temperature of the donor substrate and to initiate a controlled cleaving action at said selected depth in said donor substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said substrate material to be removed from said donor substrate;
- and
- providing a thermal source to the donor substrate and the metal workpiece prior to providing the thermal sink;
- wherein the thermal source comprises thermo-electric heating.
A process for forming a material for a solar cell, said process comprising steps of:
- disposing a donor substrate on a metal workpiece utilizing an adhesive;
- introducing hydrogen particles through a surface of the substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth;
- providing a thermal sink configured to lower a temperature of the donor substrate and to initiate a controlled cleaving action at said selected depth in said donor substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said substrate material to be removed from said donor substrate;
- and
- providing a thermal source to the donor substrate and the metal workpiece prior to providing the thermal sink;
- wherein the thermal source comprises electron beam.
A process for forming a material for a solar cell, said process comprising steps of:
- disposing a donor substrate on a metal workpiece utilizing an adhesive;
- introducing hydrogen particles through a surface of the substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth;
- providing a thermal sink configured to lower a temperature of the donor substrate and to initiate a controlled cleaving action at said selected depth in said donor substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said donor substrate;
- and
- providing a thermal source to the donor substrate and the metal workpiece prior to providing the thermal sink;
- wherein the thermal source is applied as electromagnetic field.
Dependencies are inferred from the claim text.