US 8,012,848 B2Granted

Trench isolation and method of fabricating trench isolation

AssigneeInternational Business Machines Corporation

InventorsTerence Blackwell Hook, Jeffrey Bowman Johnson, James Spiros Nakos

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Abstract

Trench isolation structure and method of forming trench isolation structures. The structures includes a trench in a silicon region of a substrate, the trench extending from a top surface of the substrate into the silicon region; an ion implantation stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.

Claims6

Dependent claims

A method, comprising:

(a) forming a trench in a silicon region of a substrate, said silicon region adjacent to a top surface of said substrate, said trench extending from said top surface of said substrate into said silicon region;
(b) forming an insulating layer over said top surface of said substrate and on sidewalls and a bottom of said trench;
(c) forming a stopping layer on said insulating layer;
(d) removing said stopping layer from regions of said insulating layer over said top surface of said substrate and over said bottom of said trench, said stopping layer remaining on said insulating layer on said sidewalls of said trench, the remaining stopping layer recessed below said top surface of said substrate, said insulating layer exposed in said bottom of said trench;
(e) filling remaining space in said trench with a dielectric fill material, said dielectric fill material not including any materials found in said stopping layer;
(f) performing an N-type ion implantation on a first side of said trench into a first region of said silicon region abutting said first side of said trench and into a first region of said dielectric material abutting said insulating layer on said first side of said trench;
(g) performing a P-type ion implantation on an second side of said trench into a second region of said silicon region abutting said second side of said trench and into a second region of said dielectric material abutting said stopping layer on said second side of said trench, said second side of said trench opposite said first side of said trench;
and
wherein said stopping layer comprises a material selected from the group consisting of nickel, cobalt, copper, chromium, molybdenum, palladium, silver, hafnium, tungsten carbide, tungsten nitride, gold, platinum, and combinations thereof.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/839,585Filed 16 Aug 2007
Published: US 2009/0045468 A119 Feb 2009
Granted: 6 Sep 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10W 10/014
Of isolation regions comprising dielectric materials: using trench refilling with dielectric materials, e.g. shallow trench isolations
H10D 84/01
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers:…
H10D 84/0188
The components including complementary IGFETs, e.g. CMOS devices: manufacturing their isolation regions
H10D 84/0191
The components including complementary IGFETs, e.g. CMOS devices: manufacturing their doped wells