Method of manufacturing an integrated circuit
AssigneeTexas Instruments Incorporated
InventorsChristoph Dirnecker, Philipp Steinmann, Badih El-Kareh
Life of this patent
Estimating the term…
Abstract
A method of manufacturing an integrated circuit comprises depositing a electrically resistive layer of a material for serving as a thin film resistor (TFR), depositing an electrically insulating layer on the resistor layer, removing the electrically insulating layer from outside an electrically active area of the resistor layer corresponding to a target TFR area, and depositing an electrically conductive layer of an electrically conductive material such that the conductive layer overlaps the target TFR area and the conductive layer electrically contacts the resistor layer outside the target TFR area.
Claims13
A method of manufacturing an integrated circuit, the method comprising:
- depositing a electrically resistive layer of a material for serving as a thin film resistor (TFR),
- depositing an electrically insulating layer on the resistor layer,
- removing the electrically insulating layer from outside an electrically active area of the resistor layer corresponding to a target TFR area,
- depositing an electrically conductive layer of an electrically conductive material such that the conductive layer overlaps the target TFR area and the conductive layer electrically contacts the resistor layer outside the target TFR area,
- partially removing the conductive layer such that at least two electrically insulated connecting regions remain, which are electrically coupled only through the resistor layer, and
- removing the conductive layer and the resistive layer outside the target TFR area and the connecting regions.
The method according to any previous claim, wherein the resistive layer is of SiCr alloy.
The method according to any previous claim, wherein the insulating layer is a TEOS layer.
A method of manufacturing an integrated circuit, the method comprising:
- depositing a electrically resistive layer of a material for serving as a thin film resistor (TFR),
- depositing an electrically insulating layer on the electrically resistive layer,
- depositing an inter-metal dielectric (IMD),
- providing a recess in the IMD adapted to contain a VIA for connecting a conductive layer buried in the IMD, and
- filling the recess with tungsten,
- removing excessive tungsten in a CMP step after the step of filling,
- removing the electrically insulating layer from outside an electrically active area of the resistor layer corresponding to a target TFR area, and
- depositing an electrically conductive layer of an electrically conductive material such that the conductive layer overlaps the target TFR area and a portion of the electrically insulating layer, wherein the conductive layer electrically contacts the resistor layer outside the target TFR area.
A method of manufacturing an integrated circuit, the method comprising:
- depositing a electrically resistive layer of a material for serving as a thin film resistor (TFR),
- depositing an electrically insulating layer on the resistor layer,
- removing the electrically insulating layer from outside an electrically active area of the resistor layer corresponding to a target TFR area,
- depositing an electrically conductive layer of an electrically conductive material such that the conductive layer overlaps the target TFR area and a portion of the electrically insulating layer, wherein the conductive layer electrically contacts the resistor layer outside the target TFR area,
- partially removing the conductive layer such that at least two electrically insulated connecting regions remain, which are electrically coupled only through the resistor layer, and
- removing the resistive layer outside the target TFR area and the connecting regions.
Dependencies are inferred from the claim text.