Optimized halo or pocket cold implants
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsChristopher R. Hatem, Benjamin Colombeau, Thirumal Thanigaivelan, Kyu-Ha Shim, Dennis Rodier
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Abstract
An improved method of performing pocket or halo implants is disclosed. The amount of damage and defects created by the halo implant degrades the performance of the semiconductor device, by increasing leakage current, decreasing the noise margin and increasing the minimum gate voltage. The halo or packet implant is performed at cold temperature, which decreases the damage caused to the crystalline structure and improves the amorphization of the crystal. The use of cold temperature also allows the use of lighter elements for the halo implant, such as boron or phosphorus.
Claims19
A method of processing a substrate, comprising:
- introducing dopants of a first species into regions of said substrate adjacent to a gate, so as to create a source region and a drain region;
- and
- introducing dopants of a second species into regions beneath said source region and drain region, said second species being of opposite conductivity than said first species, wherein said second species is implanted at a cold temperature.
A method of processing a substrate, comprising:
- introducing dopants of a first species into regions of said substrate adjacent to a gate, so as to create a source region and a drain region;
- and
- introducing dopants of a second species into regions beneath said gate, said second species being of opposite conductivity than said first species, wherein said second species is implanted at a cold temperature.
Dependencies are inferred from the claim text.