Method for fabricating lateral double diffused metal oxide semiconductor (LDMOS) transistor
AssigneeDongbu HiTek Co., Ltd.
InventorNam-Joo Kim
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Abstract
Disclosed is a method for fabricating a lateral double diffused metal oxide semiconductor (LDMOS) transistor, which includes implanting impurity ions onto a semiconductor substrate to form a drift region and a body region, forming a photoresist pattern to expose a region where an insulating oxide film is to be formed on the semiconductor substrate, implanting first impurity ions through the photoresist pattern to form a first impurity region, where the insulating oxide film is to be formed, in the semiconductor substrate, forming an insulating oxide film and an outer insulating oxide film on the semiconductor substrate by an oxidation process, and forming a gate electrode on the semiconductor substrate.
Claims20
A method comprising:
- simultaneously forming a drift region and a body region by implanting impurity ions into a semiconductor substrate;
- forming a photoresist pattern over the semiconductor substrate to expose a predetermined region of the semiconductor substrate;
- forming a first impurity region over the predetermined region by implanting a first impurity ion in the semiconductor substrate through the photoresist pattern;
- simultaneously forming an insulating oxide film at the predetermined region and an outer insulating oxide film over the semiconductor substrate by an oxidation process;
- and
- forming a gate electrode over the semiconductor substrate.
A method comprising:
- simultaneously forming a drift region and a body region into a semiconductor substrate;
- forming a first impurity region over a predetermined region;
- simultaneously forming an insulating oxide film at the predetermined region and an outer insulating oxide film spaced from the insulating oxide film over the semiconductor substrate;
- forming a gate electrode over the semiconductor substrate, wherein one end of the gate electrode extends to the body region and another end of the gate electrode extends over and contacts the insulating oxide film;
- and then
- forming a source region and a drain region on the exposed body region and drift region using the gate electrode, the insulating oxide film and the outer insulating oxide film as ion-implantation masks.
Dependencies are inferred from the claim text.