Method of fabricating semiconductor apparatus having saddle-fin transistor and semiconductor apparatus fabricated thereby
AssigneeHynix Semiconductor Inc.
InventorSang Don Lee
Life of this patent
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Abstract
A method of fabricating a saddle-fin transistor may include: forming a buffer oxide film and a hard mask oxide film over a semiconductor substrate; etching the buffer oxide film, the hard mask oxide film and the semiconductor substrate corresponding to a mask pattern to form a trench corresponding to a gate electrode and a fin region; oxidizing the exposed semiconductor substrate in the trench to form a gate oxide film; depositing a gate lower electrode in the trench; and depositing a gate upper electrode over the gate lower electrode to fill the trench.
Claims16
A method of fabricating a semiconductor memory apparatus, comprising:
- forming a self-aligned mask by a photolithography process using a gate mask, the self-aligned mask determining the location of plural transistors each having a saddle-fin transistor over a semiconductor substrate;
- repeatedly etching with different etching ratios corresponding to the self-aligned mask in one region selectively exposed by an open mask from a first pattern region of the saddle-fin transistor and a second pattern region of all transistors except the saddle-fin transistor to form a trench;
- and
- forming a gate structure of the plural transistors in the trench with the self-aligned mask as an etch mask.
A method of fabricating a semiconductor memory apparatus, comprising:
- forming a self-aligned mask by a photolithography process using a gate mask, the self-aligned mask determining the location of plural transistors each having a saddle-fin transistor over a semiconductor substrate;
- repeatedly etching with different etching ratios corresponding to the self-aligned mask in one region selectively exposed by an open mask from a first pattern region of the saddle-fin transistor and a second pattern region of all transistors except the saddle-fin transistor to form a trench;
- and
- forming a gate structure of the plural transistors in the trench,
- comprising forming the gate structureby:
- oxidizing the exposed semiconductor substrate in the trench to form a gate oxide film;
- depositing a lower electrode over the trench;
- depositing an upper electrode over the lower electrode to fill the trench;
- forming a gate hard mask nitride film over the lower electrode and the upper electrode;
- and
- removing the hard mask oxide film between the gate regions with the gate hard mask nitride film as a mask.
Dependencies are inferred from the claim text.