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US 8,012,833 B2Granted
Semiconductor device and method of fabricating the same
AssigneeHynix Semiconductor Inc.
InventorSong Hyeuk Im
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming an insulating pattern over a semiconductor substrate. An epitaxial growth layer is formed over the semiconductor substrate exposed by the insulating pattern to fill the insulating pattern with the epitaxial growth layer. A recess gate having a recess channel is formed. The recess channel is disposed between two neighboring insulating patterns.
Claims12
A method for fabricating a semiconductor device, the method comprising:
- forming an insulating pattern over a semiconductor substrate, the insulating pattern exposing portions of the semiconductor substrate;
- growing an epitaxial layer using the exposed portions of the semiconductor substrate, the epitxial layer covering the insulating pattern;
- and
- forming a recess gate having a recess channel, the recess channel disposed between two neighboring insulating patterns and a part pf the insulating pattern overlapping the recess gate.
1 more element
Dependencies are inferred from the claim text.