ORO and ORPRO with bit line trench to suppress transport program disturb

A method of making a memory device comprising sequentially performing the acts of:

• providing memory cells and first openings therebetween on a semiconductor substrate;
• forming bit line trenches under the first openings in the semiconductor substrate, thereby forming bit line openings;
• forming pocket implant regions in the semiconductor substrate adjacent the memory cells;
• forming first bit lines in the semiconductor substrate under the bit line openings;
• forming spacers adjacent the side surfaces of the memory cells and the bit line trenches;
• forming second bit lines under the bit line opening in the semiconductor substrate through the bit line opening, the second bit lines having a narrower width then the first bit lines;
• removing the spacers;
• and
• forming bit line dielectrics in the bit line openings and the first openings.