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US 8,012,824 B2Granted
Process to make high-K transistor dielectrics
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLiang-Gi Yao, Ming-Fang Wang, Shih-Chang Chen, Mong-Song Liang
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Abstract
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
Claims19
A method of reducing impurities in a high-k dielectric layer, comprising the steps of:
- providing a substrate having STIs formed therein;
- forming a high-k dielectric layer between the STIs;
- the high-k dielectric layer having impurities therein and being formed by an ALCVD process;
- annealing the high-k dielectric layer to reduce the impurities within the high-k dielectric layer without additional oxidation of the high-k dielectric layer;
- and forming a gate layer upon the annealed high-k dielectric layer.
2 more elements
Dependencies are inferred from the claim text.