Methods of fabricating stack type capacitors of semiconductor devices

A method of fabricating a capacitor of a semiconductor device, the method comprising:

• forming a lower electrode on a semiconductor substrate;
• forming a dielectric layer on the lower electrode by atomic layer deposition in one device, the atomic layer deposition including a first sequential injection of a first source gas and a first oxidizer into a chamber followed by a second sequential injection of a second source gas and a second oxidizer into the chamber, the first oxidizer having a lower oxidizing potential than the second oxidizer;
• and
• forming an upper electrode on the dielectric layer.

A method of fabricating a capacitor of a semiconductor device, the method comprising:

• forming a lower electrode on a semiconductor substrate;
• forming a dielectric layer including a high k dielectric oxide layer on the lower electrode by atomic layer deposition in one device, the atomic layer deposition including a first sequential injection of a first source gas including a metal precursor and a first oxidizer into a chamber, and then a second sequential injection of a second source gas including the metal precursor and a second oxidizer into the chamber, the first oxidizer having a lower oxidizing potential than the second oxidizer;
• and
• forming an upper electrode on the dielectric layer.