Process for forming dielectric films
AssigneesCanon Kabushiki Kaisha, Canon Anelva Corporation
InventorsNaomu Kitano, Yusuke Fukuchi, Nobumasa Suzuki, Hideo Kitagawa
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Abstract
A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.
Claims8
A process for forming a dielectric film containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate, the process comprising:
- a first step of oxidizing a surface of the silicon substrate to form a silicon oxide film;
- a second step of forming a metal film on the silicon oxide film in a non-oxidizing atmosphere;
- a third step of exposing the metal film to rare gas plasma in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon oxide film;
- and
- a fourth step of oxidizing the silicon oxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.
Dependencies are inferred from the claim text.