Manufacturing method for semiconductor chips, and semiconductor chip

A manufacturing method for semiconductor chips comprising:

• performing plasma etching on a second surface of a semiconductor wafer that has a first surface on which semiconductor devices placed in a plurality of device-formation-regions defined by dividing regions and an insulating film placed in the dividing regions are formed and the second surface on which a mask for defining the dividing regions is placed, the second surface being located opposite from the first surface, whereby portions that correspond to the dividing regions are removed and the insulating film is exposed from etching bottom portions;
• and
• removing the exposed insulating film while removing corner portions on the first surface side put in contact with the insulating film in the device-formation-regions by performing the plasma etching in a state in which exposed surfaces of the insulating film are charged with electric charge due to ions in plasma, whereby the device-formation-regions are separated into individual semiconductor chips and consequently the semiconductor chips each of which includes individualized semiconductor device are manufactured,
• wherein isotropic plasma etching is further performed from the second surface on the semiconductor wafer or the individual semiconductor chips with the mask placed at any timing before or after exposure of the insulating film, removal of the corner portions or removal of the insulating film is carried out.

A manufacturing method for semiconductor chips comprising:

• performing plasma etching on a second surface of a semiconductor wafer that has a first surface on which semiconductor devices placed in a plurality of device-formation-regions defined by dividing regions are formed and onto which a protective sheet having an insulating property is stuck and a second surface on which a mask for defining the dividing regions is placed, the second surface being located opposite from the first surface, whereby portions that correspond to the dividing regions are removed and the insulating protective sheet is exposed from etching bottom portions, and then the device-formation-regions are separated into individual semiconductor chips;
• and
• removing corner portions put in contact with the insulating protective sheet at each of the semiconductor chips by performing the plasma etching in a state in which the exposed surfaces of the insulating film are charged with electric charge due to ions in plasma, whereby semiconductor chips including individualized semiconductor devices are consequently manufactured,
• wherein isotropic plasma etching is further performed from the second surface on the semiconductor wafer or the individual semiconductor chips with the mask placed at any timing before or after exposure of the protective sheet or removal of the corner portions is carried out.