Back to results
US 8,012,789 B2Granted
Nonvolatile memory device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHan-Bong Ko, Yong-Ho Ha, Doo-Hwan Park, Bong-Jin Kuh, Hee-Ju Shin
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.
Claims13
A method of manufacturing a nonvolatile memory device, comprising:
- forming a lower electrode on a semiconductor substrate;
- forming a phase change material pattern on the lower electrode;
- forming an adhesion pattern on the phase change material pattern;
- and
- forming an upper electrode on the adhesion pattern,
- wherein the adhesion pattern includes a conductor including nitrogen, and the adhesion pattern is formed in a sputtering device using argon and nitrogen plasma on a metal target.
3 more elements
Dependencies are inferred from the claim text.