Photovoltaic device and manufacturing method thereof
AssigneeMitsubishi Electric Corporation
InventorsMasato Yonezawa, Kimikazu Hazumi, Akihiro Takami, Hiroaki Morikawa, Kunihiko Nishimura
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AssigneeMitsubishi Electric Corporation
InventorsMasato Yonezawa, Kimikazu Hazumi, Akihiro Takami, Hiroaki Morikawa, Kunihiko Nishimura
Estimating the term…
The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.
A manufacturing method of a photovoltaic device, comprising:
Dependencies are inferred from the claim text.