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AssigneeMitsubishi Chemical Corporation
InventorsTsuyoshi Takano, Takahide Joichi, Hiroaki Okagawa
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The object of the present invention is to provide a semiconductor element containing an n-type gallium nitride based compound semiconductor and a novel electrode that makes an ohmic contact with the semiconductor. The semiconductor element of the present invention has an n-type Gallium nitride based compound semiconductor and an electrode that forms an ohmic contact with the semiconductor, wherein the electrode has a TiW alloy layer to be in contact with the semiconductor. According to a preferable embodiment, the above-mentioned electrode can also serve as a contact electrode. According to a preferable embodiment, the above-mentioned electrode is superior in the heat resistance. Moreover, a production method of the semiconductor element is also provided.
A semiconductor element comprising an n-type Gallium nitride based compound semiconductor, and an electrode in ohmic contact with the semiconductor, wherein the electrode has a TiW alloy layer in contact with the semiconductor, the TiW alloy layer has a Ti concentration of 70 wt % or below, and the TiW alloy layer has a TiW composition ratio which is substantially constant in the thickness direction of the layer.
A method of producing a semiconductor element, which comprises a step of forming a TiW alloy layer as a part of an electrode on the surface of an n-type Gallium nitride based compound semiconductor in order that the TiW alloy layer has a TiW composition ratio which is substantially constant in the thickness direction of the layer, the TiW alloy layer having a Ti concentration of 70 wt % or below.
Dependencies are inferred from the claim text.