Method of fabricating semiconductor laser
AssigneeSumitomo Electric Industries, Ltd.
InventorsSusumu Yoshimoto, Hideki Matsubara
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Abstract
There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1−X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InX1Ga1−X1N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1−X1N layer to form a patterned InX1Ga1−X1N layer; and growing an AlX2Ga1−X2N (0≦X2≦1) layer on a top surface of the patterned InX1Ga1−X1N layer to form voids associated with the openings.
Claims20
A method of fabricating a semiconductor laser including a two-dimensional photonic crystal, the method comprising the steps of:
- growing an InX1Ga1−X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor to form a substrate product;
- after taking out, from the reactor, the substrate product including the InX1Ga1−X1N layer, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1−X1N layer to form a patterned InX1Ga1−X1N layer;
- and
- growing an AlX2Ga1−X2N (0≦X2≦1) layer on the patterned InX1Ga1−X1N layer so as to form voids from the openings.
Dependencies are inferred from the claim text.