Gallium nitride-based light emitting diode and method of manufacturing the same
AssigneeSamsung LED Co., Ltd.
InventorsSeok Beom Choi, Bang Won Oh, Jong Gun Woo, Doo Go Baik
Life of this patent
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Abstract
A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
Claims10
A vertical GaN-based LED comprising:
- an n-electrode;
- an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure on a surface thereof, which includes a plurality of first irregular-surface structures formed at periodic intervals wherein each of the plurality of the first irregular-surface structures have irregularities formed at non-periodic intervals,
- an active layer formed under the n-type GaN layer;
- a p-type GaN layer formed under the active layer;
- a p-electrode formed under the p-type GaN layer;
- and
- a structure support layer formed under the p-electrode,
- wherein each of the first irregular-surface structures has a hexahedron shape having an upper surface and a side surface, and the side surface of each of the first irregular-surface structures is devoid of the irregularities.
A method of manufacturing a vertical GaN-based LED comprising:
- sequentially forming an n-type GaN layer, an active layer, and a p-type GaN layer on a substrate;
- forming a p-electrode on the p-type GaN layer;
- forming a structure support layer on the p-electrode;
- removing the substrate so as to expose the surface of the n-type GaN layer;
- forming a plurality of first irregular-surface structures with-periodic intervals on the exposed surface of the n-type GaN layer;
- forming irregularities with non-periodic intervals on each of the plurality of first irregular-surface structures;
- and
- forming an n-electrode on the n-type GaN layer having the first irregular-surface structures formed thereon,
- wherein each of the first irregular-surface structures has a hexahedron shape having an upper surface and a side surface, and the side surface of each of the first irregular-surface structures is devoid of the irregularities.
A method of manufacturing a vertical GaN-based LED comprising:
- patterning the surface of a substrate into an irregularity pattern with even intervals;
- forming an n-type GaN layer such that the surface of the n-type GaN layer coming in contact with the substrate patterned into the irregularity pattern has a plurality of first irregular-surface structures with periodic intervals in accordance with the irregularity pattern;
- sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer;
- forming a p-electrode on the p-type GaN layer;
- forming a structure support layer on the p-electrode;
- removing the substrate so as to expose the first irregular-surface structure of the n-type GaN layer;
- forming irregularities with non-periodic intervals on the exposed surface of the plurality of first irregular-surface structures;
- and
- forming an n-electrode on the n-type GaN layer having the first irregular-surface structures formed thereon,
- wherein each of the first irregular-surface structures have a hexahedron shape having an upper surface and a side surface, and the side surface of each of the first irregular-surface structures is devoid of the irregularities.
Dependencies are inferred from the claim text.