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US 8,012,774 B2Granted
Coating process for a light-emitting diode (LED)
AssigneeSemiLEDS Optoelectronics Co., Ltd.
InventorsChuong A. Tran, Trung T. Doan, Jui-Kang Yen, Yung-Wei Chen
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Abstract
A light emitting diode (LED) device having a substantially conformal wavelength-converting layer for producing uniform white light and a method of making said LED at both the wafer and individual die levels are provided. The LED device includes a metal substrate, a p-type semiconductor coupled to the metal substrate, an active region coupled to the p-type semiconductor, an n-type semiconductor coupled to the active region, and a wavelength-converting layer coupled to the n-type semiconductor.
Claims14
A method for fabricating a light-emitting diode (LED) structure, comprising:
- providing a semiconductor structure disposed on a metal substrate formed by at least one of electrochemical deposition, electroless chemical deposition, chemical vapor deposition (CVD), metal organic CVD (MOCVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), physical vapor deposition (PVD), evaporation, or plasma spray, the semiconductor structure comprising:
- a p-type semiconductor adjacent the metal substrate;
- an active region coupled to the p-type semiconductor;
- and
- an n-type semiconductor coupled to the active region;
- depositing an n-contact on a surface of the n-type semiconductor;
- applying a temporary material above the n-contact;
- applying a wavelength-converting layer above at least a part of the n-type semiconductor, wherein the surface of the n-type semiconductor is roughened before applying the wavelength-converting layer by at least one of wet etching, dry etching, or photolithography with etching;
- removing the temporary material;
- and
- dicing the semiconductor structure and the metal substrate into separate LED structures.
8 more elements
Dependencies are inferred from the claim text.