Method for manufacturing liquid discharge head
AssigneeCanon Kabushiki Kaisha
InventorKazuhiro Hayakawa
Life of this patent
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Abstract
A method for manufacturing a liquid discharge head includes providing a first layer containing a metal nitride to at least a portion on one surface of a silicon substrate corresponding to a supply port; providing a second layer on the first layer, the second layer including any one of aluminum, copper, and gold, or an alloy thereof; etching a portion of the silicon substrate corresponding to the supply port by reactive ion etching in a direction from the reverse surface towards the one surface so that the etched region reaches the first layer; and removing a portion of the first layer corresponding to the supply port and then removing a portion of the second layer corresponding to the supply port, thus forming the supply port.
Claims2
A method for manufacturing a liquid discharge head including a silicon substrate having one surface, energy generation elements for generating energy used for discharging a liquid being provided at a side of the one surface, and a supply port which is provided so as to penetrate through the one surface of the silicon substrate and a reverse surface of the one surface for supplying the liquid to the energy generation elements, the method comprising:
- providing a first layer containing a metal nitride to at least a portion on the one surface of the silicon substrate corresponding to the supply port;
- providing a second layer on the first layer, the second layer comprising any one of aluminum, copper, and gold, or an alloy thereof;
- etching a portion of the silicon substrate corresponding to the supply port by reactive ion etching in a direction from the reverse surface towards the one surface so that the etched region reaches the first layer;
- removing a portion of the first layer corresponding to the supply port and then removing a portion of the second layer corresponding to the supply port, thus forming the supply port;
- and
- forming a material layer comprising materials including the metal nitride for forming the first layer on the one surface of the silicon substrate, so that the first layer and a heat generation layer for generating thermal energy used as the energy are formed from the material layer,
- wherein the metal nitride is selected from the group consisting of TaSiN and WSiN.
Dependencies are inferred from the claim text.