Processing a copolymer to form a polymer memory cell
AssigneeSpansion LLC
InventorsSuzette K. Pangrle, Matthew S. Buynoski, Nicholas H. Tripsas, Uzodinma Okoroanyanwu
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Abstract
Disclosed are organic semiconductor devices containing a copolymer layer that contains a polymer dielectric and a semiconducting polymer formed using actinic radiation. As initially formed, the copolymer layer has dielectric properties, but portions may selectively rendered conductive after those portions are exposed to actinic radiation. Also disclosed are methods of making the organic semiconductor devices. Such devices are characterized by light weight and robust reliability.
Claims20
A method of making a memory device, comprising:
- providing a first electrode within an insulating material;
- forming a passive layer above the first electrode;
- forming a copolymer layer above the first electrode, passive layer, and insulating material, the copolymer layer comprising a polymer dielectric and a semiconducting polymer precursor, the copolymer layer having dielectric properties;
- exposing a portion of the copolymer layer to actinic radiation thereby forming a semiconducting polymer in the exposed portion of the copolymer layer;
- and
- forming a second electrode aligned above the exposed portion of the copolymer layer comprising the semiconducting polymer,
- wherein the semiconducting polymer precursor forms the semiconducting polymer in response to exposure to the actinic radiation.
A method of making a polymer memory device, comprising:
- providing a first electrode within an insulating material;
- forming a passive layer above the first electrode;
- forming a copolymer layer above the first electrode, passive layer, and insulating material, the copolymer layer comprising a polymer dielectric and a semiconducting polymer precursor, the copolymer layer having dielectric properties;
- patterning an ARC above the copolymer layer so that openings in the ARC are positioned at least partially aligned above the first electrode;
- exposing a portion of the copolymer layer through openings in the ARC to actinic radiation thereby forming a semiconducting polymer in the exposed portion of the copolymer layer;
- and
- forming a second electrode aligned above the exposed portion of the copolymer layer comprising the semiconducting polymer,
- wherein the semiconducting polymer precursor forms the semiconducting polymer in response to exposure to the actinic radiation.
A method of making a polymer memory device, comprising:
- providing a first electrode within an insulating material;
- forming a passive layer above the first electrode;
- forming a copolymer layer above the first electrode, passive layer, and insulating material, the copolymer layer comprising a polymer dielectric and a semiconducting polymer precursor, the copolymer layer having dielectric properties;
- forming a barrier layer aligned above the copolymer layer;
- patterning an ARC above the barrier layer so that openings in the ARC are positioned at least partially aligned above the first electrode;
- exposing a portion of the copolymer layer through openings in the ARC and through the barrier layer to actinic radiation thereby forming a semiconducting polymer in the exposed portion of the copolymer layer;
- removing a portion of the barrier layer at least from partially above the exposed portion of the copolymer layer;
- and
- forming a second electrode aligned above the exposed portion of the copolymer layer comprising the semiconducting polymer,
- wherein the semiconducting polymer precursor forms the semiconducting polymer in response to exposure to the actinic radiation.
Dependencies are inferred from the claim text.