Method and apparatus for producing semiconductor films and related devices
AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsShogo Ishizuka, Shigeru Niki, Keiichiro Sakurai, Akimasa Yamada, Koji Matsubara
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Abstract
A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.
Claims4
A method for producing a semiconductor film having a chalcopyrite structure comprising a group Ib element, a group IIIb element and a group VIb element including selenium,
- the method including cracking selenium with plasma in a first chamber to generate radical selenium, introducing the radical selenium into a second chamber, and subjecting the radical selenium, the group Ib element and the group IIIb element to codeposition in the second chamber.
A method for producing a photoelectric conversion device provided with a semiconductor film having a chalcopyrite structure comprising a group Ib element, a group Mb element and a group VIb element including selenium,
- the method including cracking selenium with plasma in a first chamber to generate radical selenium, introducing the radical selenium into a second chamber, and subjecting the radical selenium, the group Ib element and the group IIIb element to codeposition in the second chamber
Dependencies are inferred from the claim text.