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US 8,012,532 B2Granted
Methods of making crystalline tantalum pentoxide
AssigneeMicron Technology, Inc.
InventorsVishwanath Bhat, Rishikesh Krishnan, Dan Gealy
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Abstract
There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.
Claims24
A method of forming a crystalline oxide on a surface comprising:
- contacting a ruthenium-containing material comprising at least one oxygen-containing surface with low pressure water vapor at a temperature of less than or equal to 500° C. for a contacting time of from 2 minutes to 20 minutes to remove at least a portion of the oxygen from the at least one oxygen-containing surface;
- and
- forming crystalline tantalum pentoxide on at least a portion of the at least one oxygen-containing surface having oxygen removed therefrom.
A method of forming a crystalline oxide on a surface comprising:
- contacting a ruthenium-containing material comprising at least one oxygen-containing surface with at least one treating composition selected from the group consisting of water, hydrazine, monomethyl hydrazine, carbon dioxide, and combinations thereof, at a temperature of less than or equal to 500° C. to remove at least a portion of the oxygen from the oxygen-containing surface;
- and
- forming crystalline tantalum pentoxide on at least a portion of the ruthenium-containing material.
Dependencies are inferred from the claim text.