Electroluminescent element and manufacturing method thereof

A manufacturing method of an electroluminescent element which comprises an electrode, a counter electrode, and at least one layer of an organic compound layer between the electrode and the counter electrode, the manufacturing method comprising:

• applying an electric field annealing processing that applies current having a current density of 50 to 375 A/m2 between the electrode and counter electrode of the electroluminescent element while heating the electroluminescent element with an additional heat source,
• wherein the counter electrode includes an electron injecting layer which contacts the organic compound layer, and a transparent conducting layer which contacts the electron injecting layer,
• wherein the electron injecting layer comprises at least one of indium, magnesium, calcium, lithium, barium, and rare earth metals,
• wherein the transparent conducting layer comprises a metal oxide including one of tin-doped indium oxide and zinc-doped indium oxide, and
• wherein the transparent conducting layer is formed on the electron injecting layer by a vapor growth method.

A manufacturing method of an electroluminescent element which comprises an electrode, a counter electrode, and at least one layer of an organic compound layer between the electrode and the counter electrode, the manufacturing method comprising:

• applying an electric field annealing processing that applies current having a current density of 50 to 375 A/m2 between the electrode and counter electrode of the electroluminescent element while heating the electroluminescent element with an additional heat source,
• wherein the counter electrode includes an electron injecting layer which contacts the organic compound layer, and a transparent conducting layer which contacts the electron injecting layer,
• wherein the electron injecting layer comprises at least one of indium, magnesium, calcium, lithium, barium, and rare earth metals,
• wherein the transparent conducting layer comprises a metal oxide including one of tin-doped indium oxide and zinc-doped indium oxide,
• wherein a time duration of the heating during the electric field annealing processing is 1 to 2 minutes, and
• wherein the transparent conducting layer is formed on the electron injecting layer by a vapor growth method.