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AssigneeBoard of Trustees of the University of Arkansas
InventorsXiaogang Peng, Narayan Pradhan
Estimating the term…
A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.
A composition comprising a plurality of doped semiconductor nanocrystals, the doped semiconductor nanocrystals comprising a core comprising at least one dopant and a shell substantially surrounding the core, wherein the doped semiconductor nanocrystals are free of surface doping and have a stable dopant emission at a temperature ranging from about 41° C. to about 174° C., the dopant emission accounting for greater than 99% of photoluminescence from the nanocrystals.
A composition comprising a plurality of doped semiconductor nanocrystals having a dopant emission, the doped semiconductor nanocrystals comprising a core comprising at least one dopant and a shell substantially surrounding the core, wherein the doped semiconductor nanocrystals are free of surface doping and have a photoluminescent quantum yield ranging from 12% to 50% at a temperature ranging from about 80° C. to about 105° C.
A composition comprising a plurality of doped semiconductor nanocrystals, the doped semiconductor nanocrystals comprising a core comprising an Mn dopant and shell comprising ZnSe substantially surrounding the core, wherein the doped semiconductor nanocrystals are free of Mn surface doping and have a stable dopant emission at a temperature ranging from about 41° C. to about 174° C., the dopant emission accounting for greater than 99% of photoluminescence from the nanocrystals.
Dependencies are inferred from the claim text.