Deep anisotropic silicon etch method
AssigneeSTMicroelectronics S.r.l.
InventorsRemi Dussart, Philippe Lefaucheux, Xavier Mellhaoui, Lawrence John Overzet, Pierre Ranson, Thomas Tillocher, Mohamed Boufnichel
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Abstract
A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from −40° C. to −120° C., comprising alternated and repeated steps of: etching with injection of a fluorinated gas, into the plasma reactor, and passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.
Claims7
A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from −40° C. to −120° C., comprising alternated and repeated steps of:
- etching with injection of a fluorinated gas, into the plasma reactor at a first flow rate, and
- passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor at a second flow rate, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.
Dependencies are inferred from the claim text.