Method of fabricating a release substrate
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsOlivier Rayssac, Takeshi Akatsu
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Abstract
The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer further comprising a nanoparticle concentrating zone of a second material disposed to facilitate release of the substrate, the first and second materials being selected to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment.
Claims22
A method of fabricating a release substrate of semiconductor materials, which comprises forming a reversible connection between two substrate release layers by providing a connecting layer of a first material, and providing a concentrated zone of solid nanoparticles of a second material that is different from the first material in the connecting layer to facilitate release of the substrate release layers, with the connecting layer having a bonding energy that is substantially constant even when the release substrate is exposed to heat treatment.
A method of fabricating a release substrate of semiconductor materials, which comprises:
- forming a reversible connection between two substrate release layers by providing a connecting layer on a first release layer, wherein the connecting layer is produced from a first material, and providing enrichment material within the first material to produce an enriched region;
- heat treating at least the first material and the enrichment material to cause phase separation of solid nanoparticles of a second material;
- and
- bonding the first release layer and connecting layer to a second release layer after the heat treating to form the release substrate wherein the connecting layer is located between the release layers.
Dependencies are inferred from the claim text.