Semiconductor laser
AssigneeFujitsu Limited
InventorsKan Takada, Manabu Matsuda, Takeshi Matsumoto
Life of this patent
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Abstract
A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps, an InGaP layer formed on the recessed portion, and a second GaAs layer formed on the InGaAs layer over the recessed portion.
Claims14
A semiconductor laser comprising:
- an active layer;
- a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps;
- an InGaP layer formed on the recessed portion;
- and
- a second GaAs layer formed on the InGaP layer over the recessed portion.
A method of manufacturing a semiconductor laser, comprising:
- forming an active layer;
- forming a first GaAs layer on the active layer, the first GaAs layer including a (100) crystal surface;
- forming a mask on the first GaAs layer, the mask being periodically arranged on the first GaAs layer;
- etching a surface of the (100) crystal surface of the first GaAs layer by using an etching solution to form a recessed portion including a slope of a (111) A crystal surface at least in parts;
- forming an InGaP layer on the recessed portions;
- and
- forming a second GaAs layer on the InGaP layer over the first GaAs layer.
Dependencies are inferred from the claim text.