Back to results
US 8,009,711 B2Granted
Etched-facet ridge lasers with etch-stop
AssigneeBinOptics Corporation
InventorsAlex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu
Life of this patent
Estimating the term…
Abstract
A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
Claims12
A process for fabricating a photonic device, comprising:
- forming on a substrate an epitaxial semiconductor structure incorporating an active layer;
- forming a wet etch stop layer in said epitaxial structure above said active layer;
- dry etching said epitaxial structure to form a laser having at least one facet;
- dry etching said epitaxial structure to partially form a ridge for said laser;
- wet etching said epitaxial structure to complete the formation of said ridge;
- covering said laser and said facet with a protective conformal layer;
- opening a contact window in said protective conformal layer;
- and
- depositing a metal layer to cover said window and to electrically contact said laser.
6 more elements
Dependencies are inferred from the claim text.