Semiconductor device including asymmetric sense amplifier
AssigneeSamsung Electronics Co., Ltd.
InventorHyung-seuk Kim
Life of this patent
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Abstract
A semiconductor device includes an alternating arrangement of memory cell blocks and sense amplifier blocks, such that the sense amplifier blocks include an interior sense amplifier block and a periphery amplifier block. The peripheral amplifier block includes a first sense amplification unit having a first sense amplifier and a second sense amplifier cross-coupled between a bit line and a complementary bit line. The first sense amplifier supplies/receives current to/from the bit line, the second sense amplifier provides/receives current to/from the complementary bit line, and a current driving capability for the first sense amplifier is greater than a current driving capability of the second sense amplifier.
Claims16
A semiconductor device comprising:
- an alternating arrangement of memory cell blocks and sense amplifier blocks, such that the sense amplifier blocks include an interior sense amplifier block and an periphery amplifier block;
- wherein the peripheral amplifier block comprises a first sense amplification unit comprising a first sense amplifier and a second sense amplifier cross-coupled between a bit line and a complementary bit line,
- the first sense amplifier supplies/receives current to/from the bit line, the second sense amplifier provides/receives current to/from the complementary bit line, and
- a current driving capability for the first sense amplifier is greater than a current driving capability of the second sense amplifier.
A semiconductor device comprising:
- an alternating arrangement of memory cell blocks and sense amplifier blocks, such that the sense amplifier blocks include an interior sense amplifier block and an periphery amplifier block;
- wherein the periphery sense amplifier block comprises a second sense amplification unit comprising a third sense amplifier and a fourth sense amplifier cross-coupled between a bit line and a complementary bit line,
- the third sense amplifier supplies/receives current to/from the bit line, the fourth sense amplifier provides/receives current to/from the complementary bit line, and
- a current driving capability for the fourth sense amplifier is greater than a current driving capability for the third sense amplifier.
Dependencies are inferred from the claim text.