Semiconductor storage device and read voltage correction method
AssigneeKabushiki Kaisha Toshiba
InventorsKiyohito Nishihara, Fumitaka Arai
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Abstract
A semiconductor memory device comprises a semiconductor memory, a corrected voltage storage circuit which stores a corrected voltage produced by correcting a read voltage of the semiconductor memory, and a memory controller which reads the corrected voltage from the corrected voltage storage circuit and performs a read operation of the semiconductor memory using the corrected voltage.
Claims7
A read voltage correction method for use with a semiconductor storage device equipped with a reference semiconductor memory and a to-be-corrected semiconductor memory which has a corrected voltage storage circuit, comprising:
- obtaining a write voltage of the to-be-corrected semiconductor memory;
- obtaining an erase voltage of the to-be-corrected semiconductor memory;
- and
- correcting a read voltage of the to-be-corrected semiconductor memory in accordance with the write and erase voltages obtained.
Dependencies are inferred from the claim text.