Method for fabricating an integrated circuit including memory element with spatially stable material
AssigneeQimonda AG
InventorsDieter Andres, Thomas Happ, Petra Majewski, Bernhard Ruf
Life of this patent
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Abstract
A method for fabricating an integrated circuit, the method comprises forming a first electrode, depositing resistance changing material over the first electrode, the resistance changing material having an active zone for switching the resistance of the resistance changing material and an inactive zone, and forming a second electrode over the resistance changing material. The chemical composition of the resistance changing material in the active zone differs from the chemical composition of the resistance changing material in the inactive zone.
Claims10
An integrated circuit, comprising:
- a first electrode;
- a second electrode;
- and
- a memory element coupled to the first electrode and to the second electrode, the memory element comprising phase changing material having a first region with an active zone for switching the memory element and a second region with an inactive zone, wherein a chemical composition of the phase changing material in the first region differs from a chemical composition of the phase changing material in the second region during all operations of the memory element, and wherein the second region is coupled to the second electrode and the first region is coupled to the first electrode, the first region extending from the first electrode to the second electrode and laterally surrounding the second region such that the second region is embedded into the first region.
A system, comprising:
- a host;
- and
- a memory device communicatively coupled to the host, the memory device comprising:
- a first electrode;
- second electrode;
- and
- a memory element coupled to the first electrode and the second electrode, the memory element comprising phase changing material having a first region with an active zone for switching the memory element and a second region with an inactive zone, wherein a chemical composition of the phase changing material in the first region differs from a chemical composition of the phase changing material in the second region during all operations of the memory element, and wherein the second region is coupled to the second electrode and the first region is coupled to the first electrode, the first region extending from the first electrode to the second electrode and laterally surrounding the second region such that the second region is embedded into the first region.
Dependencies are inferred from the claim text.