Magnetic random access memory

A data read method for a magnetic random access memory,

• wherein said magnetic random access memory comprises:
• a memory cell array;
• a word line connected in common to a group of memory cells arranged in a first direction in said memory cell array;
• a plurality of blocks arranged in a matrix form;
• a common word line connected in common to a group of blocks arranged in said first direction among said plurality of blocks;
• and
• a bit line connected in common to a group of blocks arranged in a second direction intersecting with said first direction among said plurality of blocks,
• wherein each of said plurality of blocks comprises:
• a plurality of memory cells in said memory cell array, each of which has a magnetoresistance element;
• and
• a transistor to which said plurality of memory cells are connected in parallel,
• wherein a gate of said transistor is connected to said common word line, one end of said magnetoresistance element is connected to said bit line through said transistor, and the other end of said magnetoresistance element is connected to said word line,
• wherein said plurality of blocks include:
• a plurality of memory blocks arranged in a matrix form;
• and
• a row of reference blocks arranged in said first direction,
• wherein data stored in said plurality of memory cells in each of said row of reference blocks are fixed,
• wherein a memory block including a selected memory cell among said plurality of memory blocks is a selected memory block,
• said bit line connected to said selected memory block is a selected bit line, and
• a reference block connected to said selected bit line among said row of reference blocks is a selected reference block,
• wherein said data read method comprises:
• first reading;
• second reading;
• and
• data determining,
• wherein said first reading comprises:
• selecting said common word line connected to said selected reference block and said common word line connected to said selected memory block;
• applying a first read voltage to said selected bit line;
• and
• applying a read word voltage different from said first read voltage by a predetermined voltage difference to said word line connected to said selected reference block and setting the other word lines to a floating state,
• wherein said second reading comprises:
• selecting said common word line connected to said selected memory block;
• applying a second read voltage to said selected bit line;
• and
• applying a read word voltage different from said second read voltage by a predetermined voltage difference to said word line connected to said selected memory cell and setting the other word lines to a floating state,
• wherein said data determining comprises determining a data stored in said selected memory cell based on a first bit line current flowing through said selected bit line in said first reading and a second bit line current flowing through said selected bit line in second reading.

A data write method for a magnetic random access memory,

• wherein said magnetic random access memory comprises:
• a memory cell array;
• a word line connected in common to a group of memory cells arranged in a first direction in said memory cell array;
• a plurality of blocks arranged in a matrix form;
• a common word line connected in common to a group of blocks arranged in said first direction among said plurality of blocks;
• and
• a bit line pair connected in common to a group of blocks arranged in a second direction intersecting with said first direction among said plurality of blocks,
• wherein said bit line pair includes a first bit line and a second bit line,
• wherein each of said plurality of blocks comprises:
• a plurality of memory cells in said memory cell array, each of the plurality of memory cells having a first transistor and a magnetoresistance element;
• and
• a second transistor to which said plurality of memory cells are connected in parallel,
• wherein a gate of said second transistor is connected to said common word line,
• a gate of said first transistor is connected to said word line,
• one of a source and a drain of said first transistor is connected to said first bit line and the other thereof is connected to said second bit line through said second transistor,
• wherein a memory block including a selected memory cell among said plurality of blocks is a selected block, and
• said first bit line and said second bit line connected to said selected block are a selected first bit line and a selected second bit line, respectively,
• wherein said data write method comprises:
• selecting said common word line connected to said selected block and selecting said word line connected to said selected memory cell;
• and
• applying a first write voltage and a second write voltage different from each other to said selected first bit line and said selected second bit line, respectively.