Magnetoresistive element

A magnetic random access memory comprising a memory element including a magnetoresistive element:

• the magnetoresistive element comprising:
• a fixed layer having a direction of magnetization fixed;
• a free layer having a direction of magnetization set variable;
• and
• a non-magnetic layer interposed between the fixed layer and the free layer, wherein:
• the free layer includes a long portion extending in a first direction and a projecting portion projecting from a region except an end of a side of the long portion in a second direction perpendicular to the first direction,
• a planar shape of the free layer has a 180° rotational symmetry but no reflection symmetry,
• the long portion has first and third corners located on a first diagonal line and second and fourth corners located on a second diagonal line, and
• the first and third corners are cut off linearly such that a single edge is added the free layer for each corners cut off.